? semiconductor components industries, llc, 2000 october, 2000 rev. 5 1 publication order number: murs120t3/d murs120t3 series preferred devices surface mount ultrafast power rectifiers murs105t3, murs110t3, murs115t3, murs120t3, murs140t3, murs160t3 ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. ? small compact surface mountable package with jbend leads ? rectangular package for automated handling ? high temperature glass passivated junction ? low forward voltage drop (0.71 to 1.05 volts max @ 1.0 a, t j = 150 c) mechanical characteristics: ? case: epoxy, molded ? weight: 95 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 12 mm tape and reel, 2500 units per reel ? polarity: polarity band indicates cathode lead ? marking: u1a, u1b, u1c, u1d, u1g, u1j maximum ratings please see the table on the following page u1x= device code x = specific device code = a, b, c, d, g or j preferred devices are recommended choices for future use and best overall value. http://onsemi.com see detailed ordering and shipping information in the table on page 2 of this data sheet. ordering information marking diagram see general marking information in the device marking table on page 2 of this data sheet. device marking information ultrafast rectifiers 1.0 ampere 50600 volts smb case 403a u1x
murs120t3 series http://onsemi.com 2 maximum ratings murs rating symbol 105t3 110t3 115t3 120t3 140t3 160t3 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 150 200 400 600 volts average rectified forward current i f(av) 1.0 @ t l = 155 c 2.0 @ t l = 145 c 1.0 @ t l = 150 c 2.0 @ t l = 125 c amps nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 40 35 amps operating junction temperature t j 65 to +175 c thermal characteristics thermal resistance, junction to lead (t l = 25 c) r q jl 13 c/w electrical characteristics maximum instantaneous forward voltage (note 1.) (i f = 1.0 a, t j = 25 c) (i f = 1.0 a, t j = 150 c) v f 0.875 0.71 1.25 1.05 volts maximum instantaneous reverse current (note 1.) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 150 c) i r 2.0 50 5.0 150 m a maximum reverse recovery time (i f = 1.0 a, di/dt = 50 a/ m s) (i f = 0.5 a, i r = 1.0 a, i r to 0.25 a) t rr 35 25 75 50 ns maximum forward recovery time (i f = 1.0 a, di/dt = 100 a/ m s, rec. to 1.0 v) t fr 25 50 ns 1. pulse test: pulse width = 300 m s, duty cycle 2.0%. device marking and ordering information device marking package shipping murs105t3 u1a smb 2500 units/tape & reel murs110t3 u1b smb 2500 units/tape & reel murs115t3 u1c smb 2500 units/tape & reel murs120t3 u1d smb 2500 units/tape & reel murs140t3 u1g smb 2500 units/tape & reel murs160t3 u1j smb 2500 units/tape & reel
murs120t3 series http://onsemi.com 3 murs105t3, murs110t3, murs115t3, murs120t3 figure 1. typical forward voltage v f, instantaneous voltage (volts) 0.3 0.6 0.4 0.8 3.0 0.01 0.03 0.02 0.2 0.1 10 2.0 0.7 0.7 0.3 0.05 0.5 5.0 , instantaneous forward current (amps) f 0.9 1.3 v r , reverse voltage (volts) 060 40 100 120 40 80 0.008 0.004 0.002 0.8 0.4 0.2 20 4.0 2.0 8.0 t j = 175 c i r 20 80 200 figure 2. typical reverse current* t c , case temperature ( c) 80 90 1.0 2.0 3.0 4.0 5.0 i f(av) 0 6.0 7.0 8.0 9.0 10 100 110 120 130 140 150 160 170 180 v r , reverse voltage (volts) 030 20 0 10 5.0 15 25 20 50 35 30 c, capacitance (pf) 10 100 figure 3. typical capacitance figure 4. current derating, case 0 0.5 1.0 2.0 3.0 4.0 5.0 0 1.0 1.5 2.0 2.5 i f(av) , average forward current (amps) p f(av) figure 5. power dissipation 0.5 0.07 1.0 7.0 1.0 1.1 1.2 100 c t c = 25 c 175 c 160 180 140 0.08 0.04 0.02 , reverse current ( a) t j = 100 c t j = 25 c 60 50 40 90 80 70 45 40 note: typical capacitance at 0 v = 45 pf * the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these same curves if applied v r is sufficiently below rated v r . rated voltage applied r jc = 13 c/w t j = 175 c , average power dissipation (watts) square wave dc , average forward current (amps) t j = 175 c dc square wave (capacitanceload) i pk i av 20 10 5.0 i
murs120t3 series http://onsemi.com 4 murs140t3, murs160t3 figure 6. typical forward voltage v f, instantaneous voltage (volts) 0.3 0.9 0.5 1.3 3.0 0.01 0.03 0.02 0.2 0.1 10 2.0 0.7 1.1 0.3 0.05 0.5 5.0 i , instantaneous forward current (amps) f 1.5 2.3 v r , reverse voltage (volts) 0 100 300 400 40 80 0.008 0.004 0.8 0.4 0.2 20 4.0 2.0 8.0 t j = 175 c i r 200 700 figure 7. typical reverse current* t c , case temperature ( c) 020 1.0 2.0 3.0 4.0 5.0 i f(av) 0 6.0 7.0 8.0 9.0 10 40 60 80 100 120 140 160 180 200 v r , reverse voltage (volts) 012 8.0 0 5.0 10 25 15 c, capacitance (pf) 4.0 40 figure 8. typical capacitance figure 9. current derating, case 0 0.5 1.0 2.0 3.0 4.0 5.0 0 1.0 1.5 2.0 2.5 i f(av) , average forward current (amps) p f(av) figure 10. power dissipation 0.7 0.07 1.0 7.0 1.7 1.9 2.1 100 c t c = 25 c 175 c 600 500 0.08 0.04 0.02 , reverse current ( a) t j = 100 c t j = 25 c 24 20 16 36 32 28 20 note: typical capacitance at 0 v = 24 pf * the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these same curves if applied v r is sufficiently below rated v r . rated voltage applied r jc = 13 c/w t j = 175 c , average power dissipation (watts) square wave dc , average forward current (amps) t j = 175 c dc square wave 10 5.0 400 200 (capacitance load) i pk i av 20
murs120t3 series http://onsemi.com 5 package dimensions a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 smb do214aa case 403a03 issue d
murs120t3 series http://onsemi.com 6 notes
murs120t3 series http://onsemi.com 7 notes
murs120t3 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. murs120t3/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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